HKW40N120FHEQ
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訂購
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資料下載
產品描述
1200V 40A High-speed IGBT Power Transistor
優勢介紹
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Ultra-low switching losses
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Ultra-low static losses
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Internal integrated fast&soft recovery anti-parallel FRD
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Maximum junction temperature 175℃
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Qualified according to JEDEC and AEC Q101
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RoHS compliant
